View IRF6610_470287.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97012
IRF6610
DirectFETTM Power MOSFET
Typical values (unless otherwise specified)
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
VDSS
Qg
tot
VGS
Qgd
3.6nC
RDS(on)
Qgs2
1.3nC
RDS(on)
Qoss
5.9nC
20V max 20V max 5.2m@ 10V 8.2m@ 4.5V
Qrr
6.4nC
Vgs(th)
2.1V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFETTM ISOMETRIC
Description
The IRF6610 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
30
Typical RDS(on) (m)
Max.
20 20 15 12 66 120 13 12
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 ID= 12A
A
mJ A
25 20 15 10 5 0 3 4 5 T J = 25C 6 7 8
ID = 15A
VDS= 16V VDS= 10V
T J = 125C
9
10
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 12A.
www.irf.com
1
05/25/05
IRF6610
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
20 --- --- --- 1.65 --- --- --- --- --- 41 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 15 5.2 8.2 2.1 -5.2 --- --- --- --- --- 11 3.9 1.3 3.6 2.4 4.9 5.9 2.0 12 51 15 5.7 1520 440 220 --- --- 6.8 10.7 2.55 --- 1.0 150 100 -100 --- 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 10V = 1.0MHz ns nC
Conditions
VGS = 0V, ID = 250A
V
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A V mV/C A nA S VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 12A VDS = 10V nC VGS = 4.5V ID = 12A See Fig. 15 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 12A Clamped Inductive Load VDS = VGS, ID = 250A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 12 2.4 1.0 18 3.6 V ns nC --- --- 120
Min.
---
Typ. Max. Units
--- 2.8 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A di/dt = 100A/s
Notes: Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6610
Absolute Maximum Ratings
Parameter
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
Max.
2.2 1.4 42 270 -40 to + 150
Units
W
C
Thermal Resistance
Parameter
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
Typ.
--- 12.5 20 --- 1.4 0.017
Max.
58 --- --- 3.0 ---
Units
C/W
W/C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 A 1 2 3 4 5 5 A
1
Ri (C/W)
1.6195 2.14056 22.2887 20.0457 11.9144
i (sec)
0.000126 0.001354 0.375850 7.41 99
0.1
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes: Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
www.irf.com
3
IRF6610
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10
1
60s PULSE WIDTH
0.1 2.5V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Tj = 25C
1
2.5V
60s PULSE WIDTH
Tj = 150C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 10V 60s PULSE WIDTH 100 T J = 150C T J = 25C T J = -40C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
1.5 ID = 15A V GS = 10V V GS = 4.5V
ID, Drain-to-Source Current ()
10
1.0
1
0.1 1 2 3 4 5
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
40 T J = 25C 30 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
Ciss 1000 Coss
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
20
10
Crss
0
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
20
40
60
80
100
120
140
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
4
www.irf.com
IRF6610
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
10 T J = 150C T J = 25C 1 T J = -40C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100sec
1
VGS = 0V 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD, Source-to-Drain Voltage (V)
T A = 25C T J = 150C Single Pulse 0.10 1.00 10.00
1msec 10msec 100.00
0.1 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
70 60
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
2.0 ID = 250A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP
50 40 30 20 10 0 25 50 75
3.6A 5.3A BOTTOM 12A
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
www.irf.com
5
IRF6610
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6610
D.U.T
Driver Gate Drive
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
Reverse Recovery Current
P.W.
Period
D=
P.W. Period VGS=10V
*
+
D.U.T. ISD Waveform Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * *
di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFETTM Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
www.irf.com
7
IRF6610
DirectFETTM Outline Dimension, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.52 E 0.48 0.52 F 0.48 0.92 G 0.88 0.82 H 0.78 N/A J N/A 0.97 K 0.93 2.10 L 2.00 0.70 M 0.59 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.019 0.020 0.019 0.020 0.035 0.036 0.031 0.032 N/A N/A 0.037 0.038 0.079 0.083 0.023 0.028 0.001 0.003 0.003 0.007
DirectFETTM Part Marking
8
www.irf.com
IRF6610
DirectFETTM Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6610). For 1000 parts on 7" reel, order IRF6610TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX CODE MAX MIN MAX MAX MIN 12.992 6.9 A N.C N.C 177.77 N.C 330.0 N.C 0.795 0.75 B N.C 19.06 20.2 N.C N.C N.C 0.504 0.53 C 0.50 0.520 13.5 12.8 13.2 12.8 0.059 0.059 D 1.5 1.5 N.C N.C N.C N.C 3.937 2.31 E 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 12.4 N.C 0.567 14.4 12.01 H 0.469 0.47 11.9 11.9 N.C 0.606 15.4 12.01
Loaded Tape Feed Direction
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.158 0.165 4.20 4.00 0.197 0.205 5.20 5.00 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/05
www.irf.com
9

▲Up To Search▲

Price & Availability of IRF6610

	To Download IRF6610 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .